Fundamental Physics of Amorphous Semiconductors: Proceedings of the Kyoto Summer Institute Kyoto, Japan, September 8—11, 1980

The Kyoto Summer Institute 1980 (KSI '80), devoted to "Fundamental Physics of Amorphous Semiconductors", was held at Research Institute for Fundamental Physics (RIFP), Kyoto University, from 8-11 September, 1980. The KSI '80 was the successor of the preceding Institutes which were held in July 1978 on "Particle Physics and Accelerator Projects" and in September 1979 on "Physics of Low-Dimensional Systems". The KSI '80 was attended by 200 participants, of which 36 were from abroad: Canada, France, Korea, Poland, U.K., U.S.A, U.S.S.R., and the Federal Republic of Germany. The KSI '80 was organized by RIFP and directed by the Amorphous Semicon­ ductor group in Japan. A few years ago, we started to organize an interna­ tional meeting on amorphous semiconductors' as a satell ite meeting of the International Conference on "Physics of Semiconductors" held on September 1-5, 1980 in Kyoto. We later decided to hold the meeting in the form of the Kyoto Summer Institute. The Kyoto Summer Institute is aimed to be something between a school and a conference. Accordingly, the object of the KSI '80 was to provide a series of invited lectures and informal seminars on fundamental physics of amorphous semiconductors. No contributed paper was accepted, but seminars were open.